This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1722G
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
■ Features
■ Package
• Code
SSMini3-F3
• Marking Symbol: 4R
• Pin Name
1. Base
• High collector-emitter voltage (Base open) VCEO
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
2. Emitter
3. Collector
Parameter
Symbol
Rating
−100
−100
−5
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
V
V
Collector current
IC
ICP
PC
Tj
−20
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
−50
125
125
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−100
−100
−5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VCE = −10 V, IC = −2 mA
V
−100
−1
nA
µA
ICEO
hFE
200
700
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −10 mA, IB = −1 mA
fT VCB = −5 V, IE = 2 mA, f = 200 MHz
− 0.3
V
200
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
SJC00389AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
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