This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1022
Unit: mm
+0.10
–0.05
0.40
3
+0.10
–0.06
0.16
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
1
2
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
1: Base
2: Emitter
3: Collector
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
20
V
EIAJ: SC-59
Mini3-G1 Package
5
30
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Marking Symbol: V
Collector power dissipation
Junction temperature
Storage temperature
200
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Transition frequency
Symbol
ICBO
hFE
Conditions
Min
Typ
Max
0.1
Unit
µA
VCB = 10 V, IE = 0
VCB = 10 V, IE = −1 mA
70
220
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz
VCB = 10 V, IE = −1 mA, f = 5 MHz
VCB = 10 V, IE = −1 mA, f = 2 MHz
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
150
250
2.8
22
MHz
dB
Noise figure
NF
4.0
50
Reverse transfer impedance
Zrb
Ω
Reverse transfer capacitance
(Common emitter)
Cre
0.9
1.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
B
C
hFE
70 to 140
110 to 220
Publication date: March 2003
SJC00112BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2295
Cre VCE
NF IE
bie gie
3.0
2.5
2.0
1.5
1.0
0.5
0
12
10
8
24
20
16
12
8
VCB = 6 V
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
f = 10.7 MHz
Ta = 25°C
Vie = gie + jbie
VCE = 10 V
−7 mA
100
−4 mA
−2 mA
58
IC = 3 mA
1 mA
6
4
2
4
f = 10.7 MHz
0
0
− 0.1
−1
−10
0.1
1
10
100
0
8
16
24
32
40
(
)
(
)
Emitter current IE mA
(
)
Collector-emitter voltage VCE
V
Input conductance gie mS
bre gre
bfe gfe
boe goe
0
− 0.1
− 0.2
− 0.3
− 0.4
− 0.5
− 0.6
0
−20
1.2
1.0
0.8
0.6
0.4
0.2
0
f = 10.7 MHz
f = 10.7 MHz
10.7
− 0.1 mA
−1 mA
yre = gre + jbre
yoe = goe + jboe
VCE = 10 V
58
100
VCE = 10 V
58
−2 mA
IE = −1 mA
100
IE = −1 mA
−40
100
IE = −4 mA
58
−60
58
100
58
−80
100
−100
yfe = gfe + jbfe
VCE = 10 V
f = 10.7 MHz
−120
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
0
20
40
60
80
100
0
0.1
0.2
0.3
0.4
0.5
(
)
(
)
Reverse transfer conductance gre mS
Forward transfer conductance gfe mS
(
)
Output conductance goe mS
SJC00112BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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