This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
(2SD592)
Silicon NPN epitaxial planar type
For low frequency amplification
Unit: mm
Complementary to 2SB0621 (2SB621)
5.0±0.2
4.0±0.2
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
Absolute Maximum Ratings T= 25C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
+0.15
+0.15
0.45
0.45
–0.1
–0.1
+0.6
+0.6
–0.2
25
V
2.5
2.5
–0.2
5
V
1
2
3
1
1.5
A
1: Emitter
2: Collector
3: Base
Peak collector current
ICP
A
Collector power dissipation
Junction temperature
PC
750
mW
C
C
TO-92-B1 Package
Tj
150
Storage temperature
T
stg
–55 to +150
Electrical Characteristics T= 25C±3C
Parameter
Symbol
Conditions
Min
30
25
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
VCBO I= 10 µA, I= 0
VCEO IC = 2 mA, IB = 0
VEBO I= 10 µA, I= 0
V
V
ICBO
VCB = 20 V, I= 0
0.1
µA
hFE1
hFE2
VCE = 10 V, I= 500 mA
VCE = 5 V, I= 1A
85
50
340
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
0.2
0.4
V
V
VBE(sat) IC = 500 mA, IB = 50 mA
0.85
1.2
Collector output capacitance
Cob
fT
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
(Common base, input open circuited)
Transition frequency
VCB = 10 V, IE = —50 mA, f = 200 MHz
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2006
SJC00344AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0592
ICEO T
a
104
103
102
10
V
CE = 10 V
1
0
40
80
120
160
(
)
Ambient temperature Ta °C
SJC00344AED
3
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